![]() THEORY OF SEMICONDUCTOR
QUANTUM DOTS
Band Structure, Optical Properties and
Applications
edited by Aleksey Andreev (Hitachi
Cambridge Laboratory, UK)
400pp (approx.)
978-981-256-881-6: US$133 / £92
US$93.10 /
£64.40
Semiconductor
structures containing zero-dimensional
objects — quantum dots — are the subject
of intensive research worldwide. This
monograph describes a detailed theory of
the electronic band structure and
optical properties of semiconductor
quantum dots.
The author provides
a comprehensive description of an
original approach based on a combination
of the Fourier transform, the Green's
function and plane-wave expansion
techniques in the framework of multiband
8x8 kp theory. The calculated band
structure, optical properties and device
applications are analyzed in line with
available experiments for a large number
of realistic quantum dot structures and
various combinations of materials, such
as InGaN, GaN/AlN, ZnSe, InGaAs
(including dots-in-the-well), ZnSe/CdSe,
and lead salts.
Contents:
- Introduction — Statistics and
Overview of Publications on QDs
- Strain in QDs — Basic Derivations
- Strain in QDs — Numerical
Implementation
- Built-In Electric Fields in QD
Structures
- Band Structure of QDs — Basic
Derivations
- Formulation of the Plane Wave
Expansion Method
- Calculations Using Plane Wave
Expansion Method — Numerical Details
- Optical Properties — Derivations
- InAs/GaAs based QDs
- InGaN/GaN based QDs
- GaN/AlN based QDs
- PbSe, PbS and PbTe QDs
- QD Based on Other Materials
- QD Lasers
- Other Optoelectronic Applications
- QDs and Quantum Information
Processing
- Appendices:
- Detailed Mathematical
Derivations, Numerical
Implementations
- Tables of Material Parameters
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